HGTD3N60C3, HGTD3N60C3S
Test Circuit and Waveform
L = 1mH
90%
OFF
RHRD460
10%
V
GE
E
E
ON
R
= 82Ω
G
V
I
CE
CE
+
90%
V
= 480V
DD
-
10%
d(OFF)I
t
t
rI
t
fI
t
d(ON)I
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gate- Operating Frequency Information for a Typical Device (Fig-
insulation damage by the electrostatic discharge of energy ure 13) is presented as a guide for estimating device perfor-
through the devices. When handling these devices, care mance for a specific application. Other typical frequency vs
should be exercised to assure that the static charge built in collector current (I ) plots are possible using the informa-
CE
the handler’s body capacitance is not discharged through tion shown for a typical unit in Figures 4, 7, 8, 11 and 12. The
the device. With proper handling and application procedures, operating frequency plot (Figure 13) of a typical device
however, IGBT’s are currently being extensively used in pro- shows f
or f
whichever is smaller at each point.
MAX1
MAX2
duction by numerous equipment manufacturers in military, The information is based on measurements of a typical
industrial and consumer applications, with virtually no dam- device and is bounded by the maximum rated junction tem-
age problems due to electrostatic discharge. IGBT’s can be perature.
handled safely if the following basic precautions are taken:
f
is defined by f
MAX1
= 0.05/(t
+ t
). Dead-
d(ON)I
MAX1
d(OFF)I
1. Prior to assembly into a circuit, all leads should be kept
time (the denominator) has been arbitrarily held to 10% of
shorted together either by the use of metal shorting the on- state time for a 50% duty factor. Other definitions are
springs or by the insertion into conductive material such possible. t
as “ECCOSORBD LD26” or equivalent.
and t
are defined in Figure 19.
d(ON)I
d(OFF)I
Device turn-off delay can establish an additional frequency
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
limiting condition for an application other than T
.
JMAX
is important when controlling output ripple under a
t
d(OFF)I
lightly loaded condition.
3. Tips of soldering irons should be grounded.
f
is defined by f
MAX2
= (P - P )/(E
OFF
+ E ). The
ON
MAX2
D
C
allowable dissipation (P ) is defined by P = (T
-
D
D
JMAX
4. Devices should never be inserted into or removed from
circuits with power on.
T )/R
. The sum of device switching and conduction losses
C
θJC
must not exceed P . A 50% duty factor was used (Figure 13)
D
and the conduction losses (P ) are approximated by P
=
5. Gate Voltage Rating - Never exceed the gate-voltage rat-
C
C
(V x I )/2.
CE CE
ing of V
. Exceeding the rated V can result in per-
GEM
GE
manent damage to the oxide layer in the gate region.
E
and E
are defined in the switching waveforms
ON
OFF
shown in Figure 19. E is the integral of the instantaneous
6. Gate Termination - The gates of these devices are es-
sentially capacitors. Circuits that leave the gate open-cir-
cuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
ON
power loss (I
gral of the instantaneous power loss (I
x V ) during turn-on and E
is the inte-
CE
CE
OFF
x V ) during turn-
CE
CE
off. All tail losses are included in the calculation for E
; i.e.
OFF
the collector current equals zero (I
= 0).
CE
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate pro-
tection is required an external zener is recommended.
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
6
HARRIS [ HARRIS CORPORATION ]
