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HGTD3N60C3S 参数 Datasheet PDF下载

HGTD3N60C3S图片预览
型号: HGTD3N60C3S
PDF下载: 下载PDF文件 查看货源
内容描述: 6A , 600V , UFS系列N沟道IGBT的 [6A, 600V, UFS Series N-Channel IGBTs]
分类和应用: 晶体晶体管电动机控制瞄准线双极性晶体管
文件页数/大小: 9 页 / 231 K
品牌: HARRIS [ HARRIS CORPORATION ]
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HGTD3N60C3, HGTD3N60C3S  
Typical Performance Curves  
o
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, T = 25 C  
C
20  
20  
18  
16  
14  
12  
10  
8
DUTY CYCLE <0.5%, V  
CE  
PULSE DURATION = 250µs  
= 10V  
V
= 15V  
GE  
12V  
18  
16  
14  
12  
10V  
10  
8
o
T
= 150 C  
o
9.0V  
8.5V  
C
T
= 25 C  
o
C
6
6
T
= -40 C  
C
4
4
8.0V  
7.5V  
7.0V  
2
2
0
0
4
6
8
10  
12  
14  
0
2
4
6
8
10  
V
, GATE TO EMITTER VOLTAGE (V)  
V
, COLLECTOR TO EMITTER VOLTAGE (V)  
GE  
CE  
FIGURE 1. TRANSFER CHARACTERISTICS  
FIGURE 2. SATURATION CHARACTERISTICS  
20  
20  
18  
16  
14  
12  
10  
8
PULSE DURATION = 250µs  
PULSE DURATION = 250µs  
DUTY CYCLE <0.5%, V  
= 10V  
18  
16  
DUTY CYCLE <0.5%, V  
= 15V  
GE  
GE  
o
T
= -40 C  
C
o
T
= 25 C  
C
14  
12  
10  
8
o
o
T
C
= -40 C  
T
= 150 C  
C
o
T
= 150 C  
o
C
6
6
T
= 25 C  
C
4
4
2
2
0
0
0
1
V , COLLECTOR TO EMITTER VOLTAGE (V)  
CE  
2
3
4
5
0
1
2
3
4
5
V
, COLLECTOR TO EMITTER VOLTAGE (V)  
CE  
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE  
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE  
14  
12  
10  
8
70  
60  
50  
40  
30  
20  
10  
0
7
o
V
= 360V, R  
= 82, T = 125 C  
J
V
= 15V  
CE  
GE  
GE  
6
5
4
3
2
1
0
t
SC  
I
SC  
6
4
2
0
25  
50  
75  
100  
125  
150  
10  
11  
12  
13  
14  
15  
o
T
, CASE TEMPERATURE ( C)  
V
GE  
, GATE TO EMITTER VOLTAGE (V)  
C
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A  
FUNCTION OF CASE TEMPERATURE  
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME  
3
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