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HGTD3N60C3S 参数 Datasheet PDF下载

HGTD3N60C3S图片预览
型号: HGTD3N60C3S
PDF下载: 下载PDF文件 查看货源
内容描述: 6A , 600V , UFS系列N沟道IGBT的 [6A, 600V, UFS Series N-Channel IGBTs]
分类和应用: 晶体晶体管电动机控制瞄准线双极性晶体管
文件页数/大小: 9 页 / 231 K
品牌: HARRIS [ HARRIS CORPORATION ]
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HGTD3N60C3, HGTD3N60C3S  
Typical Performance Curves (Continued)  
20  
18  
16  
14  
12  
10  
8
200  
o
o
o
T
= 150 C, V  
= 15V, R = 82, L = 1mH  
J
GE G  
T
= 150 C, T = 75 C  
C
J
R
= 82, L = 1mH  
G
100  
f
f
= 0.05/(t  
d(OFF)I  
+ t  
)
V
= 15V  
MAX1  
MAX2  
d(ON)I  
+ E )  
OFF  
GE  
= (P - P )/(E  
ON  
D
C
6
P
P
= ALLOWABLE DISSIPATION  
D
C
= CONDUCTION DISSIPATION  
4
(DUTY FACTOR = 50%)  
o
V
= 10V  
5
GE  
2
R
= 3.75 C/W  
JC  
θ
10  
0
1
2
3
4
6
0
100  
200  
300  
400  
500  
600  
I
, COLLECTOR TO EMITTER CURRENT (A)  
CE  
V
CE(PK)  
, COLLECTOR TO EMITTER VOLTAGE (V)  
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF  
COLLECTOR TO EMITTER CURRENT  
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA  
o
I
REF = 1.060mA, R = 200, T = 25 C  
G
L
C
500  
600  
480  
360  
240  
120  
0
15  
12  
FREQUENCY = 1MHz  
400  
300  
200  
100  
0
C
IES  
9
6
V
= 600V  
CE  
= 400V  
V
CE  
V
= 200V  
CE  
C
C
OES  
3
0
RES  
0
5
10  
15  
20  
25  
0
2
4
6
8
10  
12  
14  
V
, COLLECTOR TO EMITTER VOLTAGE (V)  
Q , GATE CHARGE (nC)  
CE  
g
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR  
TO EMITTER VOLTAGE  
FIGURE 16. GATE CHARGE WAVEFORMS  
0
10  
0.5  
0.2  
t
1
0.1  
-1  
10  
P
D
0.05  
t
2
0.02  
0.01  
DUTY FACTOR, D = t / t  
1
2
PEAK T = (P X Z  
X R  
) + T  
JC C  
SINGLE PULSE  
J
D
JC  
θ
θ
-2  
10  
-5  
-4  
10  
-3  
10  
-2  
-1  
10  
0
1
10  
10  
t , RECTANGULAR PULSE DURATION (s)  
10  
10  
1
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE  
5