HGTD3N60C3, HGTD3N60C3S
o
Absolute Maximum Ratings T = 25 C
C
HGTD3N60C3
HGTD3N60C3S
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
600
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
6
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
3
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
24
±20
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
±30
Switching Safe Operating Area at T = 150 C, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . .SSOA
J
18A at 480V
33
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.27
W/ C
C
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
100
mJ
ARV
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T
-40 to 150
260
C
J
STG
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
C
L
Short Circuit Withstand Time (Note 2) at V
NOTES:
= 10V, Figure 6 . . . . . . . . . . . . . . . . . . . . . . t
8
µs
GE
SC
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
o
2. V
CE(PK)
= 360V, T = 125 C, R
= 82Ω.
J
GE
o
Electrical Specifications
T
= 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
= 250µA, V = 0V
MIN
TYP
-
MAX
-
UNITS
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
BV
BV
I
I
600
V
V
CES
C
GE
= 0V
= 3mA, V
GE
16
30
-
-
ECS
C
o
I
V
= BV
CES
T
T
T
T
T
= 25 C
-
250
2.0
2.0
2.2
6.0
µA
mA
V
CES
CE
C
C
C
C
C
o
= 150 C
-
-
-
o
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
V
I
= I
,
= 25 C
1.65
1.85
5.5
CE(SAT)
C
C110
= 15V
V
o
GE
= 150 C
-
V
o
V
I
= 250µA,
= 25 C
3.0
V
GE(TH)
C
V
= V
GE
CE
Gate to Emitter Leakage Current
Switching SOA
I
V
= ±25V
-
-
-
-
±250
nA
A
GES
GE
o
SSOA
T = 150 C
V
V
= 480V
18
2
-
-
J
CE(PK)
CE(PK)
R
= 82Ω
= 15V
G
= 600V
A
V
GE
L = 1mH
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
I
= I
= I
, V
C110 CE
= 0.5 BV
CES
-
-
-
-
-
-
-
-
-
-
8.3
10.8
13.8
5
-
13.5
17.3
-
V
GEP
C
Q
,
V
GE
= 15V
= 20V
nC
nC
ns
ns
ns
ns
µJ
µJ
g(ON)
C
C110
V
= 0.5 BV
CE
CES
V
GE
o
Current Turn-On Delay Time
Current Rise Time
t
T = 150 C
J
d(ON)I
I
= I
CE
C110
= 0.8 BV
t
10
-
rI
d(OFF)I
V
V
R
CE(PK)
CES
Current Turn-Off Delay Time
Current Fall Time
t
= 15V
325
130
85
400
275
-
GE
= 82Ω
G
t
fI
L = 1mH
Turn-On Energy
E
ON
Turn-Off Energy (Note 3)
Thermal Resistance
NOTE:
E
245
-
-
OFF
o
R
3.75
C/W
θJC
3. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (I
= 0A). The HGTD3N60C3 and HGTD3N60C3S were tested per JEDEC
CE
standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off
Energy Loss. Turn-On losses include diode losses.
2
HARRIS [ HARRIS CORPORATION ]
