欢迎访问ic37.com |
会员登录 免费注册
发布采购

HSD32M32M4V-10 参数 Datasheet PDF下载

HSD32M32M4V-10图片预览
型号: HSD32M32M4V-10
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM模组128Mbyte ( 32M ×32位), 72引脚SIMM基于32Mx8 , 4Banks , 8K参考, 3.3V [Synchronous DRAM Module 128Mbyte ( 32M x 32-Bit ) 72-Pin SIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V]
分类和应用: 动态存储器
文件页数/大小: 10 页 / 83 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
 浏览型号HSD32M32M4V-10的Datasheet PDF文件第1页浏览型号HSD32M32M4V-10的Datasheet PDF文件第2页浏览型号HSD32M32M4V-10的Datasheet PDF文件第3页浏览型号HSD32M32M4V-10的Datasheet PDF文件第5页浏览型号HSD32M32M4V-10的Datasheet PDF文件第6页浏览型号HSD32M32M4V-10的Datasheet PDF文件第7页浏览型号HSD32M32M4V-10的Datasheet PDF文件第8页浏览型号HSD32M32M4V-10的Datasheet PDF文件第9页  
HANBit  
HSD32M32M4V  
DC OPERATING CONDITIONS  
(Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C) )  
PARAMETER  
Supply Voltage  
SYMBOL  
Vcc  
VIH  
MIN  
3.0  
2.0  
-0.3  
2.4  
-
TYP.  
MAX  
3.6  
UNIT  
V
NOTE  
3.3  
Input High Voltage  
Input Low Voltage  
Output High Voltage  
Output Low Voltage  
3.0  
Vcc+0.3  
0.8  
V
1
VIL  
0
-
V
2
VOH  
VOL  
-
V
IOH = -2mA  
IOL = 2mA  
3
-
0.4  
V
Input leakage current  
I LI  
-10  
-
10  
uA  
Notes :  
1. VIH (max) = 5.6V AC. The overshoot voltage duration is £ 3ns.  
2. VIL (min) = -2.0V AC. The undershoot voltage duration is £ 3ns.  
3. Any input 0V £ VIN £ VDDQ  
.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.  
CAPACITANCE  
(VCC = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)  
DESCRIPTION  
Address(A0~A12, BA0~BA1)  
/RAS, /CAS, /WE  
SYMBOL  
CADD  
C IN  
MIN  
15  
15  
15  
7.5  
15  
6.5  
7
MAX  
25  
UNITS  
pF  
pF  
pF  
pF  
pF  
pF  
pF  
25  
CKE(CKE0)  
CCKE  
CCLK  
25  
Clock (CLK0)  
9
/CE (/CE1)  
CCS  
25  
DQM (DQM0 ~ DQM3)  
DQ (DQ0 ~ DQ32)  
CDQM  
COUT  
7.5  
8.5  
DC CHARACTERISTICS  
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)  
TEST  
VERSION  
PARAMETER  
SYMBOL  
UNIT NOTE  
CONDITION  
Burst length = 1  
-A  
-8  
-H  
-L  
Operating current  
ICC1  
tRC ³ tRC(min)  
IO = 0mA  
480 480  
440  
440  
mA  
1
(One bank active)  
CKE £ VIL(max)  
tCC=10ns  
ICC2  
P
8
8
mA  
mA  
Precharge standby current in  
power-down mode  
CKE & CLK £ VIL(max)  
tCC=¥  
ICC2PS  
URL:www.hbe.co.kr  
REV.1.0 (August.2002)  
- 4 -  
HANBit Electronics Co.,Ltd