欢迎访问ic37.com |
会员登录 免费注册
发布采购

HDD128M72D18RPW-16B 参数 Datasheet PDF下载

HDD128M72D18RPW-16B图片预览
型号: HDD128M72D18RPW-16B
PDF下载: 下载PDF文件 查看货源
内容描述: DDR SDRAM模块1024MByte。点击( 128Mx72bit )的基础上, 64Mx8 , 4Banks , 8K参考, 184PIN -DIMM与PLL和注册 [DDR SDRAM Module 1024Mbyte (128Mx72bit), based on 64Mx8, 4Banks, 8K Ref., 184Pin-DIMM with PLL & Register]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 14 页 / 446 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
 浏览型号HDD128M72D18RPW-16B的Datasheet PDF文件第1页浏览型号HDD128M72D18RPW-16B的Datasheet PDF文件第2页浏览型号HDD128M72D18RPW-16B的Datasheet PDF文件第3页浏览型号HDD128M72D18RPW-16B的Datasheet PDF文件第4页浏览型号HDD128M72D18RPW-16B的Datasheet PDF文件第6页浏览型号HDD128M72D18RPW-16B的Datasheet PDF文件第7页浏览型号HDD128M72D18RPW-16B的Datasheet PDF文件第8页浏览型号HDD128M72D18RPW-16B的Datasheet PDF文件第9页  
HANBit  
HDD128M72D18RPW  
Absolute Maximum Ratings  
PARAMETER  
SYMBOL  
VIN, VOUT  
VDD  
RATING  
UNTE  
V
Voltage on any pin relative to Vss  
Voltage on VDD supply relative to Vss  
Voltage on VDDQ supply relative to Vss  
Storage temperature  
-0.5 ~ 3.6  
-1.0 ~ 3.6  
V
VDDQ  
TSTG  
-0.5 ~ 3.6  
V
-55 ~ +150  
1.5 * # of component  
50  
°C  
W
Power dissipation  
PD  
Short circuit current  
IOS  
mA  
Notes: Operation at above absolute maximum rating can adversely affect device reliability  
DC operating conditions  
(Recommended operating conditions (Voltage referenced to Vss = 0V, TA = 0 to 70°C) )  
PARAMETER  
SYMBOL  
VDD  
MIN  
MAX  
2.7  
UNIT  
V
NOTE  
Supply Voltage  
2.3  
2.3  
I/O Supply Voltage  
VDDQ  
2.7  
V
I/O Reference Voltage  
VREF  
0.49*VDDQ  
VREF 0.04  
VREF + 0.15  
-0.3  
0.51*VDDQ  
VREF + 0.04  
VREF + 0.3  
VREF - 0.15  
VDDQ + 0.3  
VDDQ + 0.6  
2
V
1
2
I/O Termination Voltage(system)  
Input High Voltage  
VTT  
V
VIH (DC)  
VIL (DC)  
VIN (DC)  
VID (DC)  
I LI  
V
Input Low Voltage  
V
Input Voltage Level, CK and /CK inputs  
Input Differential Voltage, CK and /CK inputs  
Input leakage current  
-0.3  
V
0.3  
V
-2  
uA  
uA  
3
Output leakage current  
I OZ  
-5  
5
Output High current (Normal strength driver)  
; VOUT=VTT + 0.84V  
I OH  
I OL  
I OH  
-16.8  
16.8  
-9  
mA  
mA  
mA  
Output Low current (Normal strength driver)  
; VOUT=VTT - 0.84V  
Output High current (Half strength driver)  
; VOUT=VTT + 0.45V  
Notes :  
1. Includes ± 25mV margin for DC offset on VREF, and a combined total of ± 50mV margin for all AC noise and DC offset on VREF, bandwidth  
limited to 20MHz. The DRAM must accommodate DRAM current spikes on VREF and internal DRAM noise coupled to VREF, both of which  
may result in VREF noise. VREF should be de-coupled with an inductance of 3nH.  
2.VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and  
must track variations in the DC level of VREF  
3. VID is the magnitude of the difference between the input level on CK and the input level on /CK.  
4. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in simulation. The  
AC and DC input specifications are relative to a VREF envelop that has been bandwidth limited to 200MHZ.  
URL : www.hbe.co.kr  
5
HANBit Electronics Co.,Ltd.  
REV 1.0 (January. 2005)  
 复制成功!