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GS84032AT-100 参数 Datasheet PDF下载

GS84032AT-100图片预览
型号: GS84032AT-100
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×18 , 128K ×32 , 128K ×36的4Mb同步突发静态存储器 [256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs]
分类和应用: 存储内存集成电路静态存储器时钟
文件页数/大小: 31 页 / 884 K
品牌: GSI [ GSI TECHNOLOGY ]
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Preliminary  
GS84018/32/36AT/B-180/166/150/100  
Sleep Mode Timing Diagram  
CK  
tH  
tS  
tKC  
tKL  
tKH  
ADSP  
ADSC  
ZZ  
tZZH  
tZZS  
tZZR  
Snooze  
Application Tips  
Single and Dual Cycle Deselect  
SCD devices force the use of “dummy read cycles” (read cycles that are launched normally but that are ended with the output  
drivers inactive) in a fully synchronous environment. Dummy read cycles waste performance but their use usually assures there  
will be no bus contention in transitions from reads to writes or between banks of RAMs. DCD SRAMs do not waste bandwidth on  
dummy cycles and are logically simpler to manage in a multiple bank application (wait states need not be inserted at bank address  
boundary crossings), but greater care must be exercised to avoid excessive bus contention.  
Rev: 1.12 7/2002  
25/31  
© 1999, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com  
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