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GS84032AT-100 参数 Datasheet PDF下载

GS84032AT-100图片预览
型号: GS84032AT-100
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×18 , 128K ×32 , 128K ×36的4Mb同步突发静态存储器 [256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs]
分类和应用: 存储内存集成电路静态存储器时钟
文件页数/大小: 31 页 / 884 K
品牌: GSI [ GSI TECHNOLOGY ]
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Preliminary  
GS84018/32/36AT/B-180/166/150/100  
Simplified State Diagram  
X
Deselect  
W
R
W
R
X
R
X
First Write  
First Read  
CW  
CR  
CR  
W
R
R
X
Burst Write  
X
Burst Read  
CR  
CR  
CW  
Notes:  
1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied Low.  
2. The upper portion of the diagram assumes active use of only the Enable (E1, E2, E3) and Write (BA, BB, BC, BD, BW and GW) control inputs  
and that ADSP is tied high and ADSC is tied low.  
3. The upper and lower portions of the diagram together assume active use of only the Enable, Write and ADSC control inputs and assumes  
ADSP is tied high and ADV is tied low.  
Rev: 1.12 7/2002  
13/31  
© 1999, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com  
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