Preliminary
GS84018/32/36AT/B-180/166/150/100
Undershoot Measurement and Timing
Overshoot Measurement and Timing
V
IH
20% tKC
V
+-2.0V
50%
DD
V
SS
50%
V
DD
V
-2.0V
SS
20% tKC
V
IL
Capacitance
o
(T = 25 C, f = 1 MHZ, V = 3.3 V)
A
DD
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
C
V
= 3.3 V
= 0 V
Control Input Capacitance
Input Capacitance
3
4
6
4
5
7
pF
pF
pF
I
DD
C
V
IN
IN
C
V
= 0 V
OUT
Output Capacitance
OUT
Note: This parameter is sample tested.
Package Thermal Characteristics
Rating
Layer Board
Symbol
TQFP Max BGA Max
Unit
Notes
R
Junction to Ambient (at 200 lfm)
Junction to Ambient (at 200 lfm)
single
four
40
24
9
38
21
5
°C/W
°C/W
°C/W
1,2,4
1,2,4
3,4
ΘJA
R
ΘJA
R
Junction to Case (TOP)
Notes:
ΘJC
1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
2. SCMI G-38-87.
3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1.
4. For x18 configuration, consult factory.
Rev: 1.12 7/2002
16/31
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
GSI [ GSI TECHNOLOGY ]
