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GS84032AT-100 参数 Datasheet PDF下载

GS84032AT-100图片预览
型号: GS84032AT-100
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×18 , 128K ×32 , 128K ×36的4Mb同步突发静态存储器 [256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs]
分类和应用: 存储内存集成电路静态存储器时钟
文件页数/大小: 31 页 / 884 K
品牌: GSI [ GSI TECHNOLOGY ]
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Preliminary  
GS84018/32/36AT/B-180/166/150/100  
Absolute Maximum Ratings  
(All voltages reference to V  
)
SS  
Symbol  
Description  
Value  
Unit  
V
Voltage on V Pins  
–0.5 to 4.6  
V
V
V
DD  
DD  
V
Voltage in V  
Pins  
–0.5 to V  
DD  
DDQ  
DDQ  
V
Voltage on Clock Input Pin  
Voltage on I/O Pins  
–0.5 to 6  
+0.5 (4.6 V max.)  
CK  
I/O  
V
–0.5 to V  
V
V
DDQ  
V
Voltage on Other Input Pins  
Input Current on Any Pin  
Output Current on Any I/O Pin  
Package Power Dissipation  
Storage Temperature  
–0.5 to V +0.5 (4.6 V max.)  
IN  
IN  
DD  
I
+/–20  
+/–20  
mA  
mA  
W
I
OUT  
P
1.5  
D
o
T
–55 to 125  
–55 to 125  
STG  
BIAS  
C
o
T
Temperature Under Bias  
C
Note:  
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Rec-  
ommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of  
time, may affect reliability of this component.  
Recommended Operating Conditions  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Notes  
V
Supply Voltage  
3.135  
2.375  
1.7  
3.3  
2.5  
3.6  
V
V
DD  
V
V
I/O Supply Voltage  
Input High Voltage  
Input Low Voltage  
1
2
2
3
3
DDQ  
DD  
V
V
+0.3  
DD  
V
IH  
V
–0.3  
0
0.8  
V
IL  
T
Ambient Temperature (Commercial Range Versions)  
25  
25  
70  
85  
°C  
°C  
A
T
Ambient Temperature (Industrial Range Versions)  
Note:  
–40  
A
1. Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 2.75 V V  
2.375 V  
DDQ  
(i.e., 2.5 V I/O) and 3.6 V V  
3.135 V (i.e., 3.3 V I/O) and quoted at whichever condition is worst case.  
DDQ  
2. This device features input buffers compatible with both 3.3 V and 2.5 V I/O drivers.  
3. Most speed grades and configurations of this device are offered in both Commercial and Industrial Temperature ranges. The part number of  
Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated  
for worst case in the temperature range marked on the device.  
4. Input Under/overshoot voltage must be –2 V > Vi < V +2 V with a pulse width not to exceed 20% tKC.  
DD  
Rev: 1.12 7/2002  
15/31  
© 1999, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com  
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