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GS74116ATP-12T 参数 Datasheet PDF下载

GS74116ATP-12T图片预览
型号: GS74116ATP-12T
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16的4Mb SRAM的异步 [256K x 16 4Mb Asynchronous SRAM]
分类和应用: 静态存储器
文件页数/大小: 14 页 / 421 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS74116ATP/J/X  
Recommended Operating Conditions  
Parameter  
Supply Voltage for -7/-8/-10/-12  
Input High Voltage  
Symbol  
Min  
3.0  
Typ  
3.3  
Max  
Unit  
V
3.6  
V
V
V
DD  
V
+0.3  
VIH  
VIL  
2.0  
DD  
Input Low Voltage  
–0.3  
0.8  
Ambient Temperature,  
Commercial Range  
o
TAc  
0
70  
85  
C
Ambient Temperature,  
Industrial Range  
o
TAI  
–40  
C
Note:  
1. Input overshoot voltage should be less than V +2 V and not exceed 20 ns.  
DD  
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.  
Capacitance  
Parameter  
Input Capacitance  
Output Capacitance  
Symbol  
CIN  
Test Condition  
VIN = 0 V  
Max  
Unit  
pF  
5
7
COUT  
VOUT = 0 V  
pF  
Notes:  
1. Tested at TA = 25°C, f = 1 MHz  
2. These parameters are sampled and are not 100% tested.  
DC I/O Pin Characteristics  
Parameter  
Symbol  
Test Conditions  
Min  
Max  
Input Leakage  
Current  
VIN = 0 to V  
DD  
IIL  
– 1 uA  
–1 uA  
1 uA  
1 uA  
Output High Z  
Output Leakage  
Current  
ILO  
VOUT = 0 to V  
DD  
Output High Voltage  
Output Low Voltage  
VOH  
VOL  
IOH = –4 mA  
ILO = +4 mA  
2.4  
0.4 V  
Rev: 1.03 10/2002  
4/14  
© 2001, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.