GS74116ATP/J/X
Truth Table
CE
OE
WE
LB
X
L
UB
X
DQ1 to DQ8
Not Selected
Read
DQ9 to DQ16
Not Selected
Read
VDD Current
H
X
X
ISB1, ISB2
L
L
L
L
H
L
L
H
L
Read
High Z
H
L
High Z
Read
L
Write
Write
IDD
X
L
H
L
Write
Not Write, High Z
Write
H
X
H
Not Write, High Z
High Z
L
L
H
X
H
X
X
High Z
H
High Z
High Z
Note: X: “H” or “L”
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
VDD
–0.5 to +4.6
V
–0.5 to V +0.5
DD
Input Voltage
VIN
V
(≤ 4.6 V max.)
–0.5 to V +0.5
DD
Output Voltage
VOUT
V
(≤ 4.6 V max.)
Allowable power dissipation
Storage temperature
PD
0.7
W
o
TSTG
–55 to 150
C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Rec-
ommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device
reliability.
Rev: 1.03 10/2002
3/14
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GSI [ GSI TECHNOLOGY ]
