GS74116ATP/J/X
Read Cycle 2: WE = V
IH
tRC
Address
CE
tAA
tAC
tHZ
tLZ
tAB
UB, LB
OE
tBHZ
tOHZ
tBLZ
tOLZ
tOE
Data valid
Data Out
High impedance
Write Cycle
-7
-8
-10
-12
Parameter
Symbol
Unit
Min
7
Max
—
—
—
—
—
—
—
—
—
—
—
Min
Max
—
—
—
—
—
—
—
—
—
—
—
Min
10
7
Max
—
—
—
—
—
—
—
—
—
—
—
Min
Max
—
—
—
—
—
—
—
—
—
—
—
Write cycle time
tWC
tAW
tCW
tBW
tDW
tDH
8
5.5
5.5
5.5
4
12
8
8
8
6
0
8
0
0
0
3
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address valid to end of write
Chip enable to end of write
Byte enable to end of write
Data set up time
5
5
7
5
7
3.5
0
4.5
0
Data hold time
0
Write pulse width
tWP
tAS
5
5.5
0
7
Address set up time
0
0
Write recovery time (WE)
Write recovery time (CE)
Output Low Z from end of write
tWR
tWR1
0
0
0
0
0
0
*
3
3
3
tWLZ
tWHZ
*
Write to output in High Z
—
3
—
3.5
—
4
—
5
ns
* These parameters are sampled and are not 100% tested.
Rev: 1.03 10/2002
7/14
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GSI [ GSI TECHNOLOGY ]
