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GS74108ATP-12I 参数 Datasheet PDF下载

GS74108ATP-12I图片预览
型号: GS74108ATP-12I
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8 4Mb的异步SRAM [512K x 8 4Mb Asynchronous SRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 13 页 / 647 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS74108ATP/J/X  
AC Test Conditions  
Output Load 1  
Parameter  
Input high level  
Input low level  
Conditions  
VIH = 2.4 V  
VIL = 0.4 V  
tr = 1 V/ns  
tf = 1 V/ns  
1.4 V  
DQ  
1
30pF  
50Ω  
Input rise time  
VT = 1.4 V  
Input fall time  
Input reference level  
Output reference level  
Output load  
Output Load 2  
1.4 V  
3.3 V  
Fig. 1& 2  
589Ω  
434Ω  
DQ  
Notes:  
1
1. Include scope and jig capacitance.  
5pF  
2. Test conditions as specified with output loading as shown in Fig. 1  
unless otherwise noted.  
3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ  
AC Characteristics  
Read Cycle  
-8  
-10  
-12  
Parameter  
Symbol  
Unit  
Min  
8
Max  
8
Min  
Max  
Min  
12  
3
Max  
Read cycle time  
tRC  
tAA  
tAC  
tOE  
tOH  
10  
3
ns  
ns  
ns  
ns  
ns  
ns  
Address access time  
3
10  
10  
4
12  
12  
5
Chip enable access time (CE)  
Output enable to output valid (OE)  
Output hold from address change  
Chip enable to output in low Z (CE)  
8
3.5  
*
3
3
3
tLZ  
*
Output enable to output in low Z (OE)  
Chip disable to output in High Z (CE)  
0
4
0
5
0
6
ns  
ns  
ns  
tOLZ  
*
tHZ  
*
Output disable to output in High Z (OE)  
3.5  
4
5
tOHZ  
* These parameters are sampled and are not 100% tested.  
Rev: 1.07 1/2006  
5/13  
© 2001, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.