GS74108ATP/J/X
Truth Table
CE
V
Current
OE
WE
DQ1 to DQ8
DD
H
L
L
L
X
L
X
H
L
Not Selected
Read
ISB1, ISB2
X
H
Write
IDD
H
High Z
Note:
X: “H” or “L”
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
VDD
–0.5 to +4.6
V
–0.5 to V +0.5
DD
Input Voltage
VIN
V
(≤ 4.6 V max.)
–0.5 to V +0.5
DD
Output Voltage
VOUT
V
(≤ 4.6 V max.)
Allowable power dissipation
Storage temperature
PD
0.7
W
o
TSTG
–55 to 150
C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Recommended Operating Conditions
Parameter
Supply Voltage for -8/-10/-12
Input High Voltage
Symbol
Min
3.0
Typ
3.3
—
Max
Unit
V
3.6
V
V
V
DD
V
+0.3
VIH
VIL
2.0
DD
Input Low Voltage
–0.3
—
0.8
Ambient Temperature,
Commercial Range
o
TAc
TAI
0
—
—
70
85
C
Ambient Temperature,
Industrial Range
o
–40
C
Notes:
1. Input overshoot voltage should be less than V +2 V and not exceed 20 ns.
DD
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Rev: 1.07 1/2006
3/13
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.