Memories and memory interfaces
Table 17. Flash command timing specifications (continued)
Symbol Description
Longword-write to FlexRAM execution time:
Min.
Typ.
Max.
Unit
Notes
teewr32b8k
teewr32b16k
teewr32b32k
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
—
—
545
630
810
1950
2050
2250
μs
μs
μs
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash (FTFL) current and power specfications
Table 18. Flash (FTFL) current and power specfications
Symbol
Description
Typ.
Unit
mA
IDD_PGM
Worst case programming current in program flash
10
6.4.1.4 Reliability specifications
Table 19. NVM reliability specifications
Typ.1
Symbol Description
Min.
Program Flash
Max.
Unit
Notes
tnvmretp10k Data retention after up to 10 K cycles
tnvmretp1k Data retention after up to 1 K cycles
tnvmretp100 Data retention after up to 100 cycles
nnvmcycp Cycling endurance
5
10
50
—
—
—
—
years
years
years
cycles
2
2
2
3
100
100
35 K
15
10 K
Data Flash
tnvmretd10k Data retention after up to 10 K cycles
tnvmretd1k Data retention after up to 1 K cycles
tnvmretd100 Data retention after up to 100 cycles
nnvmcycd Cycling endurance
5
50
—
—
—
—
years
years
years
cycles
2
2
2
3
10
100
100
35 K
15
10 K
FlexRAM as EEPROM
tnvmretee100 Data retention up to 100% of write endurance
tnvmretee10 Data retention up to 10% of write endurance
tnvmretee1 Data retention up to 1% of write endurance
5
50
—
—
—
years
years
years
2
2
2
10
15
100
100
Table continues on the next page...
MCF51JU128 Data Sheet, Rev. 4, 01/2012.
Freescale Semiconductor, Inc.
29
FREESCALE [ Freescale ]
