Memories and memory interfaces
Table 17. Flash command timing specifications (continued)
Symbol Description
Min.
Typ.
Max.
Unit
Notes
tersscr
Erase Flash Sector execution time
—
14
114
ms
2
Program Section execution time
• 512 B flash
tpgmsec512
tpgmsec1k
—
—
4.7
9.3
—
—
ms
ms
• 1 KB flash
trd1all
Read 1s All Blocks execution time
Read Once execution time
—
—
—
—
—
—
—
1.8
25
ms
μs
μs
ms
μs
trdonce
1
tpgmonce Program Once execution time
65
275
—
—
tersall
Erase All Blocks execution time
2350
30
2
1
tvfykey
Verify Backdoor Access Key execution time
Program Partition for EEPROM execution time
• 32 KB FlexNVM
tpgmpart32k
—
70
—
ms
Set FlexRAM Function execution time:
• Control Code 0xFF
tsetramff
tsetram8k
tsetram32k
—
—
—
50
0.3
0.7
—
μs
ms
ms
• 8 KB EEPROM backup
• 32 KB EEPROM backup
0.5
1.0
Byte-write to FlexRAM for EEPROM operation
teewr8bers Byte-write to erased FlexRAM location execution
time
—
175
260
μs
3
Byte-write to FlexRAM execution time:
teewr8b8k
teewr8b16k
teewr8b32k
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
—
—
340
385
475
1700
1800
2000
μs
μs
μs
Word-write to FlexRAM for EEPROM operation
teewr16bers Word-write to erased FlexRAM location
execution time
—
175
260
μs
Word-write to FlexRAM execution time:
teewr16b8k
teewr16b16k
teewr16b32k
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
—
—
340
385
475
1700
1800
2000
μs
μs
μs
Longword-write to FlexRAM for EEPROM operation
teewr32bers Longword-write to erased FlexRAM location
execution time
—
360
540
μs
Table continues on the next page...
MCF51JU128 Data Sheet, Rev. 4, 01/2012.
28
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