Electrical Characteristics
A.3.1.8
Erase P-Flash Block (FCMD=0x09)
The time required to erase the P-Flash block is given by:
1
1
tpmass ≈ 100100 ⋅ ------------------ + 67000 ⋅
fNVMOP
--------------------
fNVMBUS
A.3.1.9
Erase P-Flash Sector (FCMD=0x0A)
The typical time to erase a 512-byte P-Flash sector is given by:
1
1
------------------
fNVMOP
--------------------
fNVMBUS
tpera ≈ 20020 ⋅
+ 700 ⋅
The maximum time to erase a 512-byte P-Flash sector is given by:
1
1
------------------
fNVMOP
--------------------
fNVMBUS
tpera ≈ 20020 ⋅
+ 1400 ⋅
A.3.1.10 Unsecure Flash (FCMD=0x0B)
The maximum time required to erase and unsecure the Flash is given by:
for 128 Kbyte P-Flash and 4 Kbyte D-Flash
1
1
tuns ≈ 100100 ⋅ ------------------ + 70000 ⋅
fNVMOP
--------------------
fNVMBUS
A.3.1.11 Verify Backdoor Access Key (FCMD=0x0C)
The maximum verify backdoor access key time is given by:
1
--------------------
t = 400 ⋅
fNVMBUS
A.3.1.12 Set User Margin Level (FCMD=0x0D)
The maximum set user margin level time is given by:
1
--------------------
t = 350 ⋅
fNVMBUS
S12P-Family Reference Manual, Rev. 1.13
520
Freescale Semiconductor