Electrical Characteristics
A.3.1.3
Erase Verify P-Flash Section (FCMD=0x03)
The maximum time to erase verify a section of P-Flash depends on the number of phrases being verified
(N ) and is given by:
VP
1
--------------------
t ≈ (450 + NVP) ⋅
fNVMBUS
A.3.1.4
Read Once (FCMD=0x04)
The maximum read once time is given by:
1
--------------------
t = 400 ⋅
fNVMBUS
A.3.1.5
Program P-Flash (FCMD=0x06)
The programming time for a single phrase of four P-Flash words and the two seven-bit ECC fields is
dependent on the bus frequency, f , as well as on the NVM operating frequency, f
.
NVMOP
NVMBUS
The typical phrase programming time is given by:
1
1
tppgm ≈ 164 ⋅ ------------------ + 2000 ⋅
fNVMOP
--------------------
fNVMBUS
The maximum phrase programming time is given by:
1
1
tppgm ≈ 164 ⋅ ------------------ + 2500 ⋅
fNVMOP
--------------------
fNVMBUS
A.3.1.6
Program Once (FCMD=0x07)
The maximum time required to program a P-Flash Program Once field is given by:
1
1
--------------------
fNVMBUS
t ≈ 164 ⋅ ------------------ + 2150 ⋅
fNVMOP
A.3.1.7
Erase All Blocks (FCMD=0x08)
The time required to erase all blocks is given by:
1
1
tmass ≈ 100100 ⋅ ------------------ + 70000 ⋅
fNVMOP
--------------------
fNVMBUS
S12P-Family Reference Manual, Rev. 1.13
Freescale Semiconductor
519
FREESCALE [ Freescale ]
