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33937_09 参数 Datasheet PDF下载

33937_09图片预览
型号: 33937_09
PDF下载: 下载PDF文件 查看货源
内容描述: 三相场效应晶体管前置驱动器 [Three Phase Field Effect Transistor Pre-driver]
分类和应用: 晶体驱动器晶体管场效应晶体管
文件页数/大小: 48 页 / 734 K
品牌: FREESCALE [ Freescale ]
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FUNCTIONAL DESCRIPTIONS  
INTRODUCTION  
and off the Low Side FET.. A low-impedance drive ensures  
transient currents do not overcome an off-state driver and  
allow pulses of current to flow in the external FET. This output  
has also been designed to resist the influence of negative  
currents.  
on or off. The gate voltage is limited to about 15 V above the  
FET source voltage. A low-impedance drive is used, ensuring  
transient currents do not overcome an off-state driver and  
allow pulses of current to flow in the external FETs. This  
output has also been designed to resist the influence of  
negative currents.  
PHASE C HIGH SIDE SOURCE (PC_HS_S)  
PHASE B BOOTSTRAP (PB_BOOT)  
The source connection for the phase C High Side output  
FET is the reference voltage for the gate drive on the High  
Side FET and also the low voltage end of the bootstrap  
capacitor.  
This is the bootstrap capacitor connection for phase B. A  
capacitor connected between PC_HS_S and this pin  
provides the gate voltage and current to drive the external  
FET gate. Typically, the boostrap capacitor selection is 10 to  
20 times the gate capacitance. The voltage across this  
capacitor is limited to about 15 V. Use the 33937A to avoid  
the CAUTION on page 28 for bootstrap capacitances greater  
than 100 nF.  
PHASE C HIGH SIDE GATE (PC_HS_G)  
This is the gate drive for the phase C High Side output  
FET. This pin provides the gate bias to turn the external FET  
on or off. The gate voltage is limited to about 15 V above the  
FET source voltage. A low-impedance drive is used, ensuring  
transient currents do not overcome an off-state driver and  
allow pulses of current to flow in the external FETs. This  
output has also been designed to resist the influence of  
negative currents.  
PHASE A LOW SIDE SOURCE (PA_LS_S)  
The phase A Low Side source is the pin used to return the  
gate currents from the Low Side FET. Best performance is  
realized by connecting this node directly to the source of the  
Low Side FET for phase A.  
PHASE C BOOTSTRAP (PC_BOOT)  
PHASE A LOW SIDE GATE (PA_LS_G)  
This is the bootstrap capacitor connection for phase C. A  
capacitor connected between PC_HS_S and this pin  
provides the gate voltage and current to drive the external  
FET gate. Typically, the boostrap capacitor selection is 10 to  
20 times the gate capacitance. The voltage across this  
capacitor is limited to about 15 V. Use the 33937A to avoid  
the CAUTION on page 28 for bootstrap capacitances greater  
than 100 nF.  
This is the gate drive for the phase A Low Side output FET.  
It provides high current through a low impedance to turn on  
and off the Low Side FET. A low-impedance drive ensures  
transient currents do not overcome an off-state driver and  
allow pulses of current to flow in the external FET. This output  
has also been designed to resist the influence of negative  
currents.  
PHASE B LOW SIDE SOURCE (PB_LS_S)  
PHASE A HIGH SIDE SOURCE (PA_HS_S)  
The phase B Low Side source is the pin used to return the  
gate currents from the Low Side FET. Best performance is  
realized by connecting this node directly to the source of the  
Low Side FET for phase B.  
The source connection for the phase A High Side output  
FET is the reference voltage for the gate drive on the High  
Side FET and also the low voltage end of the bootstrap  
capacitor.  
PHASE B LOW SIDE GATE (PC_LS_G)  
PHASE A HIGH SIDE GATE (PA_HS_G)  
This is the gate drive for the phase B Low Side output FET.  
It provides high current through a low impedance to turn on  
and off the Low Side FET. A low-impedance drive ensures  
transient currents do not overcome an off-state driver and  
allow pulses of current to flow in the external FET. This output  
has also been designed to resist the influence of negative  
currents.  
This is the gate drive for the phase A High Side output  
FET. This pin provides the gate bias to turn the external FET  
on or off. The gate voltage is limited to about 15 V above the  
FET source voltage. A low-impedance drive is used, ensuring  
transient currents do not overcome an off-state driver and  
allow pulses of current to flow in the external FETs. This  
output has also been designed to resist the influence of  
negative currents.  
PHASE B HIGH SIDE SOURCE (PB_HS_S)  
PHASE A BOOTSTRAP (PA_BOOT)  
The source connection for the phase B High Side output  
FET is the reference voltage for the gate drive on the High  
Side FET and also the low voltage end of the bootstrap  
capacitor.  
This is the bootstrap capacitor connection for phase A. A  
capacitor connected between PC_HS_S and this pin  
provides the gate voltage and current to drive the external  
FET gate. Typically, the boostrap capacitor selection is 10 to  
20 times the gate capacitance. The voltage across this  
capacitor is limited to about 15 V. Use the 33937A to avoid  
PHASE B HIGH SIDE GATE (PB_HS_G)  
This is the gate drive for the phase B High Side output  
FET. This pin provides the gate bias to turn the external FET  
33937  
Analog Integrated Circuit Device Data  
Freescale Semiconductor  
25  
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