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33937_09 参数 Datasheet PDF下载

33937_09图片预览
型号: 33937_09
PDF下载: 下载PDF文件 查看货源
内容描述: 三相场效应晶体管前置驱动器 [Three Phase Field Effect Transistor Pre-driver]
分类和应用: 晶体驱动器晶体管场效应晶体管
文件页数/大小: 48 页 / 734 K
品牌: FREESCALE [ Freescale ]
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ELECTRICAL CHARACTERISTICS  
STATIC ELECTRICAL CHARACTERISTICS  
Table 4. Static Electrical Characteristics (continued)  
Characteristics noted under conditions 8.0 V VPWR = VSUP 40 V, -40°C TA 135°C, unless otherwise noted. Typical  
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted.  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
SUPERVISORY AND CONTROL CIRCUITS  
Logic Inputs (Px_LS, Px_HS, EN1, EN2) (31)  
High Level Input Voltage Threshold  
Low Level Input Voltage Threshold  
V
VIH  
VIL  
2.1  
0.9  
Logic Inputs (SI, SCLK, CS) (30), (31)  
High Level Input Voltage Threshold  
Low Level Input Voltage Threshold  
V
VIH  
VIL  
2.1  
0.9  
Input Logic Threshold Hysteresis (30)  
VIHYS  
mV  
µA  
Inputs Px_LS, SI, SCLK, CS, Px_HS, EN1, EN2  
100  
8.0  
250  
450  
18  
Input Pull-down Current, (Px_LS, SI, SCLK, EN1, EN2)  
IINPD  
IINPU  
CIN  
0.3 VDD VIN VDD  
Input Pull-up Current, (CS, Px_HS) (32)  
0 VIN 0.7 VDD  
Input Capacitance (30)  
10  
25  
µA  
pF  
0.0 V VIN 5.5 V  
RST Threshold (33)  
15  
VTH_RST  
RRST  
1.0  
2.1  
V
RST Pull-down Resistance  
0.3 VDD VIN VDD  
kΩ  
40  
60  
85  
Power-ON RST Threshold, (VDD Falling)  
SO High Level Output Voltage  
VTHRST  
VSOH  
3.4  
4.0  
4.5  
V
V
I
OH = 1.0 mA  
SO Low Level Output Voltage  
OL = 1.0 mA  
0.9 VDD  
0.1 VDD  
1.0  
VSOL  
ISO_LEAK_T  
CSO_T  
VOH  
V
µA  
pF  
V
I
SO Tri-state Leakage Current  
CS = 0.7 VDD, 0.3 VDD = VSO = 0.7 VDD  
-1.0  
SO Tri-state Capacitance (30), (34)  
0.0 V VIN 5.5 V  
0.85 VDD  
15  
INT High Level Output Voltage  
I
OH = -500 µA  
INT Low Level Output Voltage  
OL = 500 µA  
VDD  
0.5  
VOL  
V
I
THERMAL WARNING  
Thermal Warning Temperature (30), (35)  
Thermal Hysteresis (30)  
TWARN  
THYST  
150  
8.0  
170  
10  
185  
12  
°C  
°C  
Notes  
30. This parameter is guaranteed by design, not production tested.  
31. Logic threshold voltages derived relative to a 3.3 V 10% system.  
32. Pull-up circuits will not allow back biasing of VDD.  
33. There are two elements in the RST circuit: 1) one generally lower threshold enables the internal regulator; 2) the second removes the  
reset from the internal logic.  
34. This parameter applies to the OFF state (tri-stated) condition of SO is guaranteed by design but is not production tested.  
35. The Thermal Warning circuit does not force IC shutdown above this temperature. It is possible to set a bit in the MASK register to  
generate an interrupt when overtemperature is detected, and the status bit will always indicate if any of the three individual Thermal  
Warning circuits in the IC sense a fault.  
33937  
Analog Integrated Circuit Device Data  
Freescale Semiconductor  
13  
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