ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions 8.0 V ≤ VPWR = VSUP ≤ 40 V, -40°C ≤ TA ≤ 135°C, unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
CURRENT SENSE AMPLIFIER (CONTINUED)
Output Rise Time to 90% (49)
tIS_RISE
tIS_FALL
SR(5)
µs
µs
RL = 1.0 kΩ, CL = 500 pF, 0.3 V < VO < 4.8 V, Gain = 5.0 to 15
–
–
–
–
1.0
1.0
Output Fall Time to 10% (49)
RL = 1.0 kΩ, CL = 500 pF, 0.3 V < VO < 4.8 V, Gain = 5.0 to 15
Slew Rate at Gain = 5.0(48)
V/µs
RL = 1.0 kΩ, CL = 20 pF
5.0
–
–
–
–
Phase Margin at Gain = 5.0(48)
f
30
°
M
Unity Gain Bandwidth (48)
GBW
BWG
CMR
MHz
RL = 1.0 kΩ, CL = 100 pF
–
20
–
–
–
Bandwidth at Gain = 15 (48)
MHz
dB
RL = 1.0 kΩ, CL = 50 pF
2.0
Common Mode Rejection (CMR) (48) with VIN
VIN_CM = 400 mV*sin(2*π*freq*t)
VIN
_DIF = 0.0 V, RS = 1.0 kΩ
RFB = 15 kΩ, VREFIN = 0.0 V
CMR = 20*Log(VOUT/VIN
Freq = 100 kHz
_
)
CM
50
40
30
–
–
–
–
–
–
Freq = 1.0 MHz
Freq = 10 MHz
SUPERVISORY AND CONTROL CIRCUITS
EN1 and EN2 Propagation Delay
INT Rise Time CL = 100 pF
tPROP
tRINT
–
10
10
–
–
–
–
–
280
250
200
250
ns
ns
ns
ns
INT Fall Time CL = 100 pF
tFINT
INT Propagation Time
tPROPINT
Notes
48. This parameter is guaranteed by design, not production tested.
49. Rise and fall times are measured from the transition of a step function on the input to 90% of the change in output voltage.
33937
Analog Integrated Circuit Device Data
Freescale Semiconductor
16
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