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33937_09 参数 Datasheet PDF下载

33937_09图片预览
型号: 33937_09
PDF下载: 下载PDF文件 查看货源
内容描述: 三相场效应晶体管前置驱动器 [Three Phase Field Effect Transistor Pre-driver]
分类和应用: 晶体驱动器晶体管场效应晶体管
文件页数/大小: 48 页 / 734 K
品牌: FREESCALE [ Freescale ]
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ELECTRICAL CHARACTERISTICS  
STATIC ELECTRICAL CHARACTERISTICS  
Table 4. Static Electrical Characteristics (continued)  
Characteristics noted under conditions 8.0 V VPWR = VSUP 40 V, -40°C TA 135°C, unless otherwise noted. Typical  
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted.  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
CHARGE PUMP  
Charge Pump  
High Side Switch On Resistance  
Low Side Switch On Resistance  
Ω
Ω
RDS(on)_HS  
RDS(on)_LS  
VTHREG  
6.0  
5.0  
10  
9.4  
900  
Regulation Threshold Difference(15), (17)  
Charge Pump Output Voltage(16), (17)  
IOUT = 40 mA, 6.0 V < VSYS < 8.0 V  
IOUT = 40 mA, VSYS > = 8.0 V  
mV  
250  
500  
VCP  
V
8.5  
12  
9.5  
GATE DRIVE  
High Side Driver On Resistance (Sourcing)  
RDS(ON)_H_SRC  
Ω
Ω
V
PWR = VSUP = 16 V, -40°C TA 25°C  
6.0  
8.5  
VPWR = VSUP = 16 V, 25°C < TA 135°C  
High Side Driver On Resistance (Sinking)  
RDS(ON)_H_SINK  
V
PWR = VSUP = 16 V  
3.0  
0.5  
High Side Current Injection Allowed Without Malfunction(17), (18)  
Low Side Driver On Resistance (Sourcing)  
IHS_INJ  
A
RDS(ON)_L_SRC  
Ω
V
PWR = VSUP = 16 V, -40°C TA 25°C  
6.0  
8.5  
VPWR = VSUP = 16 V, 25°C < TA 135°C  
Low Side Driver On-Resistance (Sinking)  
RDS(ON)_L_SINK  
Ω
V
PWR = VSUP = 16 V  
3.0  
0.5  
Low Side Current Injection Allowed Without Malfunction(17), (18)  
Gate Source Voltage, VPWR = VSUP = 40 V  
ILS_INJ  
Α
V
= 0(19)  
= 0  
VGS_H  
VGS_L  
13  
13  
14.8  
15.4  
16.5  
17  
High Side, I  
GATE  
Low Side, I  
GATE  
High Side Gate Drive Output Leakage Current, Per Output(20)  
IHS_LEAK  
18  
µA  
Notes  
15. When VLS is this amount below the normal VLS linear regulation threshold, the charge pump is enabled.  
16. SYS is the system voltage on the input to the charge pump. With recommended external components (1.0 µF, MUR 120 diode). The  
Charge Pump is designed to supply the gate currents of a system with 100 A FETs in a 12 V application.  
V
17. This parameter is a design characteristic, not production tested.  
18. Current injection only occurs during output switch transitions. The IC is immune to specified injected currents for a duration of  
approximately 1.0µs after an output switch transition. 1.0 µs is sufficient for all intended applications of this IC.  
19. If a slightly higher gate voltage is required, larger bootstrap capacitors are required. At high duty cycles, the bootstrap voltage may not  
recover completely, leading to a higher output on-resistance. This effect can be minimized by using low ESR capacitors for the bootstrap  
and the VLS capacitors.  
20. A small internal charge pump will supply up to 30 μA nominal to compensate for leakage on the High Side FET gate output and maintain  
voltages after bootstrap events. It is not intended for external components to be connected to the High Side FET gate, but small amounts  
of additional leakage can be accommodated. See Figures 11 through 14 for typical load margins.  
33937  
Analog Integrated Circuit Device Data  
Freescale Semiconductor  
10