ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 5.5V ≤ VSUP ≤ 18V, -40°C ≤ TA ≤ 125°C for the 33912 and -40°C ≤ TA ≤ 85°C for the
34912, unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal
conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
LIN PHYSICAL LAYER, TRANSCEIVER (LIN)(39)
Output Current Limitation
IBUSLIM
mA
Dominant State, VBUS = 18V
40
120
–
200
–
Leakage Output Current to GND
Dominant State; VBUS = 0V; VBAT = 12V
IBUS_PAS_dom
IBUS_PAS_REC
IBUS_NO_GND
IBUS
-1.0
mA
–
-1.0
–
–
20
1.0
µA
mA
Recessive State; 8V < VBAT < 18V; 8V < VBUS < 18V; VBUS ≥ VBAT
GND Disconnected; GNDDEVICE = VSUP; VBAT = 12V; 0 < V
< 18V
BUS
–
–
100
µA
V
Disconnected; VSUP_DEVICE = GND; 0 < V
< 18V
BUS
BAT
Receiver Input Voltages
Receiver Dominant State
Receiver Recessive State
VSUP
VBUSDOM
VBUSREC
VBUS_CNT
VHYS
–
0.6
0.475
–
–
–
0.4
–
Receiver Threshold Center (VTH_DOM + VTH_REC)/2
Receiver Threshold Hysteresis (VTH_REC - VTH_DOM
0.5
–
0.525
0.175
)
LIN Transceiver Output Voltage
V
VLIN_REC
VLIN_DOM_0
VLIN_DOM_1
VSUP -1.0
Recessive State, TXD HIGH, I
= 1.0µA
–
–
1.4
2
OUT
–
–
Dominant State, TXD LOW, 500Ω External Pull-up Resistor, LDVS = 0
Dominant State, TXD LOW, 500Ω External Pull-up Resistor, LDVS = 1
1.1
1.7
LIN Pull-up Resistor to V
SUP
RSLAVE
TLINSD
20
150
–
30
165
10
60
180
–
kΩ
°C
°C
Over-temperature Shutdown(40)
Over-temperature Shutdown Hysteresis
TLINSD_HYS
Notes
39. Parameters guaranteed for 7.0V ≤ VSUP ≤ 18V.
40. When over-temperature shutdown occurs, the LIN bus goes in recessive state and the flag LINOT in LINSR is set.
33912
Analog Integrated Circuit Device Data
Freescale Semiconductor
13
FREESCALE [ Freescale ]
