Typical Electrical Characteristics
(continued)
1.1
DRAIN-SOURCE BREAKDOWN VOLTAGE
I
D
= -250µA
1.08
1.06
1.04
1.02
1
0.98
0.96
0.94
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
-I
S
, REVERSE DRAIN CURRENT (A)
10
5
V
GS
= 0V
BV
DSS
, NORMALIZED
1
0.5
T = 125°C
J
25°C
-55°C
0.1
0.01
0.001
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature
.
1000
800
10
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -2.9A
8
V
DS
= -10V
-20V
-15V
500
CAPACITANCE (pF)
C iss
300
200
6
C oss
4
100
f = 1 MHz
V
GS
= 0V
C rss
2
50
0.1
0.2
0.5
1
2
5
10
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
0
0
2
4
6
8
Q
g
, GATE CHARGE (nC)
10
12
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristic.
6
V
DS
= -15V
, TRANSCONDUCTANCE (SIEMENS)
5
TJ = -55°C
25°C
4
125°C
3
2
1
g
0
0
FS
-2
I
D
-4
-6
, DRAIN CURRENT (A)
-8
-10
Figure 11. Transconductance Variation with Drain
Current and Temperature.
NDS9953A.SAM
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
