Typical Electrical Characteristics
-20
V
GS
= -10V
, DRAIN-SOURCE CURRENT (A)
-15
3
-8.0
DRAIN-SOURCE ON-RESISTANCE
-7.0
R
DS(on)
, NORMALIZED
V
GS
= -3.5V
2.5
-4.0
-4.5
-5.0
-6.0
-5.5
-5.0
2
-5.5
-6.0
-10
-4.5
-4.0
-5
1.5
-3.5
-3.0
1
-7.0
-8.0
-10
I
0
D
0
-1
V
DS
-2
-3
, DRAIN-SOURCE VOLTAGE (V)
-4
-5
0.5
0
-3
-6
-9
I
D
, DRAIN CURRENT (A)
-12
-15
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
1.6
2
DRAIN-SOURCE ON-RESISTANCE
1.4
R
DS(ON)
, NORMALIZED
V
G S
= -10V
R
DS(on)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= -2.9A
V
GS
= -10V
TJ = 125°C
1.5
1.2
1
25°C
1
0.8
-55°C
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
0.5
0
-3
-6
-9
I
D
, DRAIN CURRENT (A)
-12
-15
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
-10
GATE-SOURCE THRESHOLD VOLTAGE
1.2
V
DS
= -10V
-8
I
D
, DRAIN CURRENT (A)
TJ = -55°C
25°C
125°C
V
th
, NORMALIZED
1.1
V
DS
= V
GS
I
D
= -250µA
-6
1
-4
0.9
-2
0.8
0
-1
-2
-3
-4
-5
V
GS
, GATE TO SOURCE VOLTAGE (V)
-6
0.7
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with
Temperature.
NDS9953A.SAM
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
