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NDS9953A 参数 Datasheet PDF下载

NDS9953A图片预览
型号: NDS9953A
PDF下载: 下载PDF文件 查看货源
内容描述: 双P沟道增强型场效应晶体管 [Dual P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲光电二极管
文件页数/大小: 10 页 / 343 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
I
S
V
SD
t
rr
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
Parameter
Conditions
Min
Typ
Max
-1.2
Units
A
V
ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0 V, I
S
= -1.25 A
(Note 2)
-0.8
-1.3
100
V
GS
= 0 V, I
F
= -1.25 A, dI
F
/dt = 100 A/µs
P
D
(
t
) =
T
J
T
A
R
θ
J A
t
)
(
=
T
J
T
A
R
θ
J C
R
θ
CA
t
)
+
(
=
I
2
(
t
) ×
R
DS
(
ON
)
D
T
J
Typical R
θ
JA
for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 78
o
C/W when mounted on a 0.5 in
2
pad of 2oz cpper.
b. 125
o
C/W when mounted on a 0.02 in
2
pad of 2oz cpper.
c. 135
o
C/W when mounted on a 0.003 in
2
pad of 2oz cpper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDS9953A.SAM