Typical Thermal Characteristics
2.5
STEADY-STATE POWER DISSIPATION (W)
I
D
, STEADY-STATE DRAIN CURRENT (A)
5
2
Total Power for Dual Operation
4
1a
1.5
Power for Single Operation
3
1a
1b
1
1b
1c
4.5"x5" FR-4 Board
T
A
= 25
o
C
Still Air
2
1c
4.5"x5" FR-4 Board
T
A
= 2 5
o
C
Still Air
V
G S
= - 1 0 V
0.5
0
0.2
0.4
0.6
0.8
2oz COPPER MOUNTING PAD AREA (in
2
)
1
1
0
0.1
0.2
0.3
0.4
2oz COPPER MOUNTING PAD AREA (in
2
)
0.5
Figure 12. SO-8 Dual Package Maximum
Steady-State Power Dissipation versus
Copper Mounting Pad Area.
Figure 13. Maximum Steady-State Drain
Current versus Copper Mounting Pad
Area.
30
10
-I
D
, DRAIN CURRENT (A)
3
1
0.3
0.1
0.03
0.01
0.1
(
DS
)
ON
LIM
IT
10
1m
10
10
0m
ms
s
0u
s
s
R
1s
V
GS
= -10V
SINGLE PULSE
R
θ
J A
10
s
DC
= See Note 1c
T
A
= 25°C
0.5
1
2
5
10
- V
DS
, DRAIN-SOURCE VOLTAGE (V)
30
50
0.2
Figure 14. Maximum Safe Operating Area.
1
TRANSIENT THERMAL RESISTANCE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
0.001
0.01
0.1
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
r(t), NORMALIZED EFFECTIVE
R
θ
JA (t) = r(t) * R
θ
JA
R JA = See Note 1c
θ
t
1
t
2
T
J
- T
A
= P * R
JA
(t)
θ
Duty Cycle, D = t
1
/ t
2
10
100
300
t
1
, TIME (sec)
Figure 15. Transient Thermal Response Curve
.
Note:
Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
NDS9953A.SAM
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
