Typical Electrical Characteristics (continued)
1.15
10
5
ID = 250µA
VGS = 0V
1.1
1.05
1
2
1
T
= 125°C
J
0.5
25°C
0.2
0.1
-55°C
0.05
0.95
0.02
0.01
0.9
-50
-25
0
25
50
75
100
125
150
0.2
0.4
0.6
0.8
1
1.2
TJ , JUNCTION TEMPERATURE (°C)
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
1500
1000
10
ID = 5A
8
6
4
2
0
VDS = 15V
C
500
iss
300
200
C
oss
f = 1 MHz
VGS = 0V
C
rss
100
0.1
0.2
0.5
1
2
5
10
20 30
0
2
4
6
8
10
12
14
16
V
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
DS
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
ton
toff
VDD
td(off)
td(on)
tr
tf
RL
VIN
90%
90%
D
VOUT
V
OUT
VGS
10%
10%
90%
RGEN
INVERTED
DUT
G
V
50%
50%
IN
S
10%
PULSE W IDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDS9936.SAM
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
