Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
VDS = 24 V, VGS = 0 V
30
V
Zero Gate Voltage Drain Current
2
µA
µA
nA
nA
20
TJ= 55°C
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
100
-100
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 5 A
VGS = 4.5 V, ID = 3.9 A
1
1.4
3
V
TJ=125°C
TJ=125°C
TJ=125°C
0.7
1.1
2.2
Static Drain-Source On-Resistance
0.044
0.066
0.066
0.099
0.05
0.1
RDS(ON)
W
0.08
0.16
On-State Drain Current
40
20
3
A
S
ID(on)
VGS = 10 V, VDS = 10 V
VGS = 4.5 V, VDS = 10 V
VDS = 10 V, ID = 3.5 A
Forward Transconductance
8
gFS
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Input Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
525
315
185
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
12
10
25
10
17
1.5
3.7
30
25
50
50
35
ns
ns
tD(ON)
tr
tD(OFF)
tf
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 W
ns
ns
nC
nC
nC
Qg
VDS = 15 V,
ID = 5 A, VGS = 10 V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
© 1993 Fairchild Semiconductor Corporation
NDS9936.SAM
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
