Typical Electrical Characteristics
(continued)
12
30
, TRANSCONDUCTANCE (SIEMENS)
10
T J = -55°C
10
3
1ms
10m
s
8
25°C
I
D
, DRAIN CURRENT (A)
100m
1
0.3
0.1
0.03
0.01
s
6
125°C
10s
V
GS
= 10V
SINGLE PULSE
T
A
= 25°C
4
2
g
FS
V
DS
= 1 0 V
0
0
2
4
6
8
10
1
2
3
5
10
20
30
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 13. Transconductance Variation with Drain
Current and Temperature.
Figure 14. Maximum Safe Operating Area.
1
0 .5
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
0 .0 0 5
0 .0 0 2
0 .0 0 1
0 .0001
R
JA
(t) = r(t) * R
JA
θ
θ
R
JA
= See Note 1c
θ
t
1
T
J
- T
t
2
= P * R
JA
(t)
A
θ
Duty Cycle, D = t
1
/ t
2
0 .001
0 .0 1
0 .1
1
10
100
300
t
1
, TIME (sec)
Figure 15. Transient Thermal Response Curve
.
Note:
Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
NDS9936.SAM
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
