Typical Electrical Characteristics
-30
3
2.5
2
VGS = -10V
-6.0 -5.0
-4.5
VGS = -3.0V
-4.0
-25
-20
-15
-10
-5
-3.5
-3.5
-4.0
-4.5
1.5
1
-3.0
-5.0
-6.0
-10
-2.5
0
0.5
0
-5
-10
-15
-20
-25
-30
0
-0.5
-1
-1.5
-2
-2.5
-3
V
, DRAIN-SOURCE VOLTAGE (V)
I
, DRAIN CURRENT (A)
DS
D
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1.6
1.4
1.2
1
2
1.5
1
VGS = -10V
ID =-7.0A
V GS = -10V
T
= 125°C
J
25°C
-55°C
0.8
0.6
0.5
-50
-25
0
25
50
75
100
125
150
0
-5
-10
-15
-20
-25
-30
T
, JUNCTION TEMPERATURE (°C)
I
D
, DRAIN CURRENT (A)
J
Figure 4. On-Resistance Variation
with Drain Current and Temperature.
Figure 3. On-Resistance Variation
with Temperature.
-20
1.2
1.1
1
VDS = -10V
T
= -55°C
125°C
J
VDS = VGS
-16
-12
-8
I D = -250µA
25°C
0.9
0.8
0.7
0.6
-4
0
-1
-2
-3
-4
-5
-6
-50
-25
0
25
T , JUNCTION TEMPERATURE (°C)
J
50
75
100
125
150
V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 6. Gate Threshold Variation
with Temperature.
Figure 5. Transfer Characteristics.
NDS8435 Rev. B2
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
