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NDS8435 参数 Datasheet PDF下载

NDS8435图片预览
型号: NDS8435
PDF下载: 下载PDF文件 查看货源
内容描述: 单P沟道增强型场效应晶体管 [Single P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体小信号场效应晶体管开关光电二极管
文件页数/大小: 10 页 / 332 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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Electrical Characteristics (TA = 25°C unless otherwise noted)  
Symbol Parameter Conditions  
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS  
Min  
Typ  
Max  
Units  
Maximum Continuous Drain-Source Diode Forward Current  
Drain-Source Diode Forward Voltage  
-2.1  
-1.2  
A
V
IS  
-0.8  
VSD  
Notes:  
VGS = 0 V, IS = -2.1 A (Note 2)  
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by  
design while RqCA is determined by the user's board design.  
T - T  
T - T  
= I2D (t) ´ RDS(ON )  
J
J
A
J
A
( )  
PD t =  
=
(t)  
T
R
R
+R (t)  
qJ  
A
q
q
CA  
J
C
Typical RqJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:  
a. 50oC/W when mounted on a 1 in2 pad of 2oz copper.  
b. 105oC/W when mounted on a 0.04 in2 pad of 2oz copper.  
c. 125oC/W when mounted on a 0.006 in2 pad of 2oz copper.  
1a  
1b  
1c  
Scale 1 : 1 on letter size paper  
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.  
NDS8435 Rev. B2