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NDS8435 参数 Datasheet PDF下载

NDS8435图片预览
型号: NDS8435
PDF下载: 下载PDF文件 查看货源
内容描述: 单P沟道增强型场效应晶体管 [Single P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体小信号场效应晶体管开关光电二极管
文件页数/大小: 10 页 / 332 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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Typical Electrical and Thermal Characteristics (continued)  
25  
20  
15  
10  
5
2.5  
2
VDS = -10V  
1a  
T
= -55°C  
J
25°C  
125°C  
1.5  
1
1b  
1c  
4.5"x5" FR-4 Board  
TA  
25o  
Still Air  
=
C
0
0.5  
0
-5  
-10  
-15  
-20  
-25  
-30  
0
0.2  
0.4  
0.6  
0.8  
1
2
I
, DRAIN CURRENT (A)  
2oz COPPER MOUNTING PAD AREA (in  
)
D
Figure 13. Transconductance Variation with Drain  
Current and Temperature.  
Figure 14. SO-8 Maximum Steady-State Power  
Dissipation versus Copper Mounting Pad Area.  
8
7
6
50  
30  
10  
1a  
3
1
1b  
1c  
0.3  
0.1  
VGS = -10V  
SINGLE PULSE  
5
4.5"x5" FR-4 Board  
TA  
Still Air  
= C  
25 o  
R JA = See Note 1c  
q
0.03  
0.01  
TA = 25°C  
VGS  
=
-10V  
4
0
0.2  
0.4  
0.6  
0.8  
1
0.1  
0.2  
0.5  
- V  
1
2
5
10  
30  
50  
2
)
2oz COPPER MOUNTING PAD AREA (in  
, DRAIN-SOURCE VOLTAGE (V)  
DS  
Figure 16. Maximum Safe Operating Area.  
Figure 15. Maximum Steady-State Drain  
Current versus Copper Mounting Pad  
Area.  
1
D = 0.5  
0.2  
0.5  
0.2  
0.1  
R
(t) = r(t) * R  
JA  
q
JA  
q
R
= See Note 1c  
0.1  
0.05  
JA  
q
0.05  
P(pk)  
0.02  
0.01  
Single Pulse  
0.02  
0.01  
t
1
t
2
0.005  
T
- T  
= P * R  
(t)  
2
J
JA  
A
q
Duty Cycle, D = t / t  
1
0.002  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
300  
t1, TIME (sec)  
Figure 17. Transient Thermal Response Curve.  
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change  
depending on the circuit board design.  
NDS8435 Rev. B2