Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
VDS = -24 V, VGS = 0 V
-30
V
Zero Gate Voltage Drain Current
-1
µA
µA
nA
nA
-10
TJ = 55°C
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
100
-100
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
VGS = -10 V, ID = -7.0 A
-1
-1.5
-1.1
-3
V
-0.7
-2.2
TJ = 125°C
TJ = 125°C
RDS(ON)
Static Drain-Source On-Resistance
0.023 0.028
0.038 0.06
0.037 0.045
W
VGS = -4.5 V, ID = -5.8 A
VGS = -10 V, VDS = -5 V
VGS = -4.5, VDS = -5 V
On-State Drain Current
-25
-10
A
S
ID(on)
Forward Transconductance
10
gFS
VDS = -10 V, ID = -7.0 A
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Input Capacitance
VDS = -15 V, VGS = 0 V,
f = 1.0 MHz
1500
950
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
370
SWITCHING CHARACTERISTICS (Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
12
18
65
49
47
5.5
14
30
30
ns
ns
tD(on)
tr
tD(off)
tf
VDD = -10 V, ID = -1 A,
VGEN = -10 V, RGEN = 6 W
120
80
ns
ns
60
nC
nC
nC
Qg
Qgs
Qgd
VDS = -15 V,
ID = -7.0 A, VGS = -10 V
Gate-Source Charge
Gate-Drain Charge
NDS8435 Rev. B2
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
