Typical Electrical Characteristics
(continued)
1.1
15
DRAIN-SOURCE BREAKDOWN VOLTAGE
-I
S
, REVERSE DRAIN CURRENT (A)
I
D
= -250µA
1.05
5
1
V
GS
=0V
BV
DSS
, NORMALIZED
TJ = 125°C
0.1
25°C
-55°C
1
0.01
0.95
0.001
0.9
-50
0.0001
-25
0
25
50
75
100
125
150
0
T
J
, JUNCTION TEMPERATURE (°C)
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 7. Breakdown Voltage Variation with
Temperature
.
Figure 8. Body Diode Forward Voltage Variation with
Source Current and Temperature.
1000
5
Ciss
, GATE-SOURCE VOLTAGE (V)
500
CAPACITANCE (pF)
4
I
D
= -2.7A
V
DS
= -5V
-10V
-15V
300
200
Coss
3
2
100
f = 1 MHz
V
GS
= 0 V
50
0.1
-V
0.5
1
5
10
15 20
0
0
2
4
6
Q
g
, GATE CHARGE (nC)
8
10
DS
0.2
-V
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Capacitance Characteristics
.
GS
Crss
1
Figure 10. Gate Charge Characteristics.
-V
DD
t
d(on)
t
on
t
off
t
r
90%
t
d(off)
90%
t
f
V
IN
D
R
L
V
OUT
V
OUT
10%
V
GS
R
GEN
10%
90%
G
DUT
S
V
IN
10%
50%
50%
PULSE WIDTH
INVERTED
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms.
NDC632P Rev. B1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
