ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= -250 µA
V
DS
= -16 V, V
GS
= 0 V
T
J
= 55 C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= -250 µA
T
J
= 125
o
C
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= - 2.7 A
T
J
= 125
o
C
V
GS
= -2.7 V, I
D
= - 2.2 A
I
D(on)
g
FS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
On-State Drain Current
V
GS
= -4.5 V, V
DS
= -5 V
V
GS
= -2.7 V, V
DS
= -5 V
Forward Transconductance
V
DS
= -10 V, I
D
= - 2.7 A
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
550
260
75
pF
pF
pF
-10
-4
6
S
-0.4
-0.3
-0.7
-0.5
0.1
0.145
0.152
o
-20
-1
-10
100
-100
V
µA
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
-1
-0.8
0.14
0.28
0.2
A
V
Ω
SWITCHING CHARACTERISTICS
(Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= -5 V,
I
D
= -2.7 A, V
GS
= -4.5 V
V
DD
= -5 V, I
D
= -1 A,
V
GEN
= -4.5 V, R
GEN
= 6
Ω
10
40
25
17
8.7
1.7
1.8
20
60
40
30
15
ns
ns
ns
ns
nC
nC
nC
NDC632P Rev. B1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
