Typical Electrical Characteristics
-15
2
V
GS
=-5V -4.5 -4.0
I
D
, DRAIN-SOURCE CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
-3.5
-12
R
DS(ON)
, NORMALIZED
1.8
V
GS
=-2.5V
-2.7
-3.0
-3.0
-9
1.6
-2.7
-2.5
1.4
-3.5
-4.0
-4.5
-5.0
-6
1.2
-2.0
-3
1
0
0
-1
V
DS
0.8
-2
-3
-4
, DRAIN-SOURCE VOLTAGE (V)
-5
0
-3
-6
-9
I
D
, DRAIN CURRENT (A)
-12
-15
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1.6
2
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
I
D
= -2.7A
1.4
V
GS
=-4.5 V
T J = 125°C
1.5
R
DS(ON)
, NORMALIZED
V
GS
= -4.5V
R
DS(on)
NORMALIZED
,
1.2
25°C
1
1
-55°C
0.5
0.8
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
0
0
-3
-6
-9
I
D
, DRAIN CURRENT (A)
-12
-15
Figure 3. On-Resistance Variation
with Temperature
.
Figure 4. On-Resistance Variation
with Drain Current and Temperature
.
-15
1.2
25°C
125°C
GATE-SOURCE THRESHOLD VOLTAGE
V
DS
=- 5V
-12
T = -55°C
J
V
DS
= V
GS
1.1
I
D
= -250µA
I
D
, DRAIN CURRENT (A)
V
th
, NORMALIZED
1
-9
0.9
-6
0.8
-3
0.7
0
0
-1
V
GS
-2
-3
-4
, GATE TO SOURCE VOLTAGE (V)
-5
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation
with Temperature
.
NDC632P Rev. B1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
