Typical Electrical and Thermal Characteristics
(continued)
12
STEADY-STATE POWER DISSIPATION (W)
2
V
DS
=- 5V
, TRANSCONDUCTANCE (SIEMENS)
10
TJ = -55°C
25°C
1a
1.5
8
6
125°C
1
1b
1c
4
0.5
4.5"x5" FR-4 Board
T
A
= 2 5 C
Still Air
o
2
g
FS
0
0
-3
-6
-9
-12
-15
I
D
, DRAIN CURRENT (A)
0
0
0.2
0.4
0.6
0.8
2oz COPPER MOUNTING PAD AREA (in
2
)
1
Figure 13. Transconductance Variation with
Drain Current and Temperature
.
Figure 14. SuperSOT
TM
-6 Maximum Steady-State Power
Dissipation versus Copper Mounting Pad Area.
3
-I
D
, STEADY-STATE DRAIN CURRENT (A)
1a
20
10
5
N)
LIM
IT
2.5
-I
D
, DRAIN CURRENT (A)
2
1
0.5
0.2
0.1
0.05
0.02
1
0.01
0.1
RD
S(O
10
10
0u
s
1m
s
10
ms
0m
s
1b
2
1c
1s
V
1.5
GS
= -4.5V
DC
4.5"x5" FR-4 Board
T
A
= 2 5 C
Still Air
V
G S
= -4.5V
o
SINGLE PULSE
R
θ
J A
= See Note 1c
T
A
= 25°C
0.2
0.5
1
2
5
10
20
30
1
0
0.2
0.4
0.6
0.8
2oz COPPER MOUNTING PAD AREA (in
2
)
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 15. Maximum Steady-State Drain Current
versus Copper Mounting Pad Area.
Figure 16. Maximum Safe Operating. Area
1
TRANSIENT THERMAL RESISTANCE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.00001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
300
D = 0.5
r(t), NORMALIZED EFFECTIVE
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
R
θ
JA (t) = r(t) * R
θ
JA
R JA = See Note 1c
θ
t
1
t
2
T
J
- T
A
= P * R
(t)
θ
JA
Duty Cycle, D = t
1
/ t
2
Figure 17. Transient Thermal Response Curve
.
Note:
Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
NDC632P Rev. B1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
