FDS8958A_F085
Dual
N
& P-Channel PowerTrench
®
MOSFET
Typical Characteristics: Q2 (P-Channel)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
R
θJA
(t) = r(t) * R
θA
R
θJ
A
= 135 °C/W
P(pk)
P(pk)
t
1
t
t
2
t
2
0.01
T
J
- T
A
= P * R
θJ
A
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 23. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS8958A_F085 Rev.
A
7
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