Typical Characteristics: Q2 (P-Channel)
2
1.8
1.6
1.4
1.2
1
30
VGS = -10V
-6.0V
-5.0V
VGS=-4.0V
-4.5V
20
10
0
-4.5V
-4.0V
-5.0V
-6.0V
-7.0V
-3.5V
-8.0V
-10V
-3.0V
0.8
0
1
2
3
4
5
6
0
6
12
18
24
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 12. On-Region Characteristics.
Figure 13. On-Resistance Variation with
Drain Current and Gate Voltage.
0.25
1.6
ID = -5A
ID = -2.5A
VGS = -10V
1.4
0.2
0.15
0.1
1.2
1
TA = 125oC
TA = 25oC
0.8
0.6
0.05
0
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 14. On-Resistance Variation with
Temperature.
Figure 15. On-Resistance Variation with
Gate-to-Source Voltage.
15
100
25oC
VDS = -5V
TA = -55oC
VGS =0V
10
12
9
TA = 125oC
125oC
1
25oC
0.1
6
-55oC
0.01
3
0.001
0
0.0001
1
1.5
2
2.5
3
3.5
4
4.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Transfer Characteristics.
Figure 17. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS8958A_F085 Rev. A
6
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