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FDS8958A_10 参数 Datasheet PDF下载

FDS8958A_10图片预览
型号: FDS8958A_10
PDF下载: 下载PDF文件 查看货源
内容描述: 双N和P沟道PowerTrench MOSFET [Dual N & P-Channel PowerTrench MOSFET]
分类和应用:
文件页数/大小: 8 页 / 799 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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Typical Characteristics: Q1 (N-Channel)  
20  
2.2  
1.8  
1.4  
1
VGS = 10.0V  
4.0V  
3.5V  
16  
12  
8
VGS = 3.5V  
6.0V  
4.5V  
4.0  
4.5V  
5.0  
6.0V  
3.0V  
10.0V  
16  
4
0
0.6  
0
0.5  
1
1.5  
2
0
4
8
12  
20  
VDS, DRAIN-SOURCE VOLTAGE (V)  
ID, DRAIN CURRENT (A)  
Figure 1. On-Region Characteristics.  
Figure 2. On-Resistance Variation with  
Drain Current and Gate Voltage.  
1.6  
1.4  
1.2  
1
0.08  
0.07  
0.06  
0.05  
0.04  
0.03  
0.02  
0.01  
ID = 7A  
VGS = 10.0V  
ID = 3.5A  
TA = 125oC  
TA = 25oC  
0.8  
0.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
2
4
6
8
10  
TJ, JUNCTION TEMPERATURE (oC)  
VGS, GATE TO SOURCE VOLTAGE (V)  
Figure 3. On-Resistance Variation with  
Temperature.  
Figure 4. On-Resistance Variation with  
Gate-to-Source Voltage.  
20  
16  
12  
8
100  
VGS = 0V  
VDS = 5V  
10  
TA = 125oC  
1
0.1  
TA = 125oC  
-55oC  
25oC  
25oC  
0.01  
-55oC  
4
0.001  
0.0001  
0
1.5  
2
2.5  
3
3.5  
4
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
VGS, GATE TO SOURCE VOLTAGE (V)  
VSD, BODY DIODE FORWARD VOLTAGE (V)  
Figure 5. Transfer Characteristics.  
Figure 6. Body Diode Forward Voltage Variation  
with Source Current and Temperature.  
FDS8958A_F085 Rev. A  
4
www.fairchildsemi.com  
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