FDS8958A_F085
Dual
N
& P-Channel PowerTrench
®
MOSFET
Typical Characteristics: Q1 (N-Channel)
10
800
I
D
= 7A
V
DS
= 10V
20V
600
15V
f = 1MHz
V
GS
= 0 V
V
GS
, GATE-SOURCE VOLTAGE (V)
8
CAPACITANCE (pF)
6
C
iss
400
4
C
oss
200
2
C
rss
0
0
2
4
6
8
Q
g
, GATE CHARGE (nC)
10
12
0
0
5
10
15
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 7. Gate Charge Characteristics.
100
10
Figure 8. Capacitance Characteristics.
I
D
, DRAIN CURRENT (A)
10
100ms
1ms
10ms
1s
10s
DC
V
GS
= 10V
SINGLE PULSE
R
θJA
= 135
o
C/W
T
A
= 25
o
C
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
1
0.01
0.1
t
AV
, TIME IN AVALANCHE (mS)
Figure 9. Maximum Safe Operating Area.
Figure 10. Unclamped Inductive Switching
Capability Figure
50
SINGLE PULSE
R
θJ
A
= 135°
C/W
T
A
= 25°
C
P(pk), PEAK TRANSIENT POWER (W)
40
30
20
10
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
Figure 11. Single Pulse Maximum Power Dissipation.
FDS8958A_F085 Rev.
A
5
0.1
Tj=125
1
10
100
www.fairchildsemi.com
1
I
AS
, AVALANCHE CURRENT (A)
R
DS(ON)
LIMIT
100µs
Tj=25
100
1000
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
