FDS8958A_F085
Dual
N
& P-Channel PowerTrench
®
MOSFET
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
T
A
= 25°C unless otherwise noted
Parameter
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage, Forward
Test Conditions
I
D
= 250
µA
V
GS
= 0 V,
V
GS
= 0 V,
I
D
= -250
µA
I
D
= 250
µA,
Referenced to 25°C
I
D
= -250 µA, Referenced to 25°C
V
DS
= 24 V,
V
GS
= 0 V
V
DS
= -24 V,
V
GS
= 0 V
V
GS
= 20 V,
V
DS
= 0 V
V
DS
= 0 V
Type Min Typ Max Units
Q1
Q2
Q1
Q2
Q1
Q2
All
All
Q1
Q2
Q1
Q2
Q1
1
-1
1.9
-1.7
-4.5
4.5
19
27
24
42
57
65
20
-20
25
10
575
528
145
132
65
70
2.1
6.0
30
-30
25
-23
1
-1
100
-100
3
-3
V
mV/°C
µA
nA
nA
V
mV/°C
28
42
40
52
78
80
A
S
mΩ
Off Characteristics
Gate-Body Leakage, Reverse V
GS
= -20 V,
(Note 2)
On Characteristics
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
V
DS
= V
GS
,
I
D
= 250
µA
V
DS
= V
GS
,
I
D
= -250 µA
I
D
= 250
µA,
Referenced to 25°C
I
D
= -250 µA, Referenced to 25°C
V
GS
= 10 V,
I
D
= 7 A
V
GS
= 10 V, I
D
= 7 A, T
J
= 125°C
I
D
= 6 A
V
GS
= 4.5 V,
I
D
= -5 A
V
GS
= -10 V,
V
GS
= -10 V, I
D
= -5 A, T
J
= 125°C
V
GS
= -4.5 V,
I
D
= -4 A
V
GS
= 10 V,
V
DS
= 5 V
V
GS
= -10 V,
V
DS
= -5 V
V
DS
= 5 V,
I
D
= 7 A
V
DS
= -5 V,
I
D
=-5 A
Q1
V
DS
= 15 V, V
GS
= 0 V, f = 1.0 MHz
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
pF
pF
pF
Ω
Q2
Reverse Transfer Capacitance V
DS
= -15 V, V
GS
= 0 V, f = 1.0 MHz
V
GS
= 15 mV,
f = 1.0 MHz
Gate Resistance
FDS8958A_F085 Rev.
A
2
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