Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown
Q1
Q2
30
-30
V
VGS = 0 V,
GS = 0 V,
ID = 250 µA, Referenced to 25°C
ID = -250 µA, Referenced to 25°C
VDS = 24 V,
VDS = -24 V,
ID = 250 µA
ID = -250 µA
Voltage
V
Breakdown Voltage
Temperature Coefficient
Q1
Q2
25
-23
∆BVDSS
∆TJ
IDSS
mV/°C
µA
Zero Gate Voltage Drain
Current
VGS = 0 V
VGS = 0 V
VDS = 0 V
Q1
Q2
All
1
-1
100
IGSSF
IGSSR
Gate-Body Leakage, Forward VGS = 20 V,
nA
nA
Gate-Body Leakage, Reverse VGS = -20 V,
VDS = 0 V
All
-100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
Q1
Q2
1
-1
1.9
-1.7
3
-3
V
VDS = VGS
VDS = VGS
,
,
ID = 250 µA
ID = -250 µA
Gate Threshold Voltage
Temperature Coefficient
Q1
Q2
-4.5
4.5
∆VGS(th)
∆TJ
RDS(on)
ID = 250 µA, Referenced to 25°C
ID = -250 µA, Referenced to 25°C
mV/°C
mΩ
Static Drain-Source
On-Resistance
VGS = 10 V,
ID = 7 A
Q1
19
27
24
28
42
40
VGS = 10 V, ID = 7 A, TJ = 125°C
VGS = 4.5 V,
ID = 6 A
VGS = -10 V,
VGS = -10 V, ID = -5 A, TJ = 125°C
VGS = -4.5 V,
VGS = 10 V,
VGS = -10 V,
VDS = 5 V,
ID = -5 A
Q2
42
57
65
52
78
80
ID = -4 A
VDS = 5 V
VDS = -5 V
ID = 7 A
ID(on)
gFS
On-State Drain Current
Q1
Q2
Q1
Q2
20
-20
A
S
Forward Transconductance
25
10
VDS = -5 V,
ID =-5 A
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
Q1
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
575
528
145
132
65
70
2.1
6.0
pF
pF
pF
Ω
VDS = 15 V, VGS = 0 V, f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Q2
VDS = -15 V, VGS = 0 V, f = 1.0 MHz
VGS = 15 mV,
f = 1.0 MHz
FDS8958A_F085 Rev. A
2
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