FDS8978 Dual N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
1.10
I
D
= 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1000
C, CAPACITANCE (pF)
1.05
2000
C
ISS
=
C
GS
+ C
GD
1.00
C
RSS
=
C
GD
C
OSS
≅
C
DS
+ C
GD
0.95
V
GS
= 0V, f = 1MHz
0.90
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
10
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 11. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 12. Capacitance vs Drain to Source
Voltage
60
100us
I
D
, DRAIN CURRENT (A)
V
DD
= 15V
8
10
1ms
6
1
4
THIS AREA IS
LIMITED BY r
DS(on)
10ms
100ms
1s
10s
DC
0.1
2
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 7.5A
I
D
= 1A
0
3
6
9
12
15
18
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
0
Q
g
, GATE CHARGE (nC)
0.01
0.01
0.1
1
10
100
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 13. Gate Charge Waveforms for Constant
Gate Currents
Figure 14. Forward Bias Safe Operating Area
©2011 Fairchild Semiconductor Corporation
FDS8978 Rev. B1
5
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
