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FDS8978_11 参数 Datasheet PDF下载

FDS8978_11图片预览
型号: FDS8978_11
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道MOSFET PowerTrench® [N-Channel PowerTrench® MOSFET]
分类和应用:
文件页数/大小: 11 页 / 704 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDS8978 Dual N-Channel PowerTrench
®
MOSFET
January 2011
FDS8978
N-Channel PowerTrench
®
MOSFET
30V, 7.5A, 18mΩ
Features
r
DS(on)
= 18mΩ, V
GS
= 10V, I
D
= 7.5A
r
DS(on)
= 21mΩ, V
GS
= 4.5V, I
D
= 6.9A
High performance trench technology for extremely low
r
DS(on)
Low gate charge
High power and current handling capability
100% Rg Tested
RoHS Compliant
D2
D1
D1
SO-8
S2
Pin 1
S1
G1
D2
D2
D2
G2
D1
D1
5
6
7
8
Q1
Q2
4
3
2
1
G2
S2
G1
S1
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(on)
and fast switching speed.
Applications
DC/DC converters
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
θJA
= 50
o
C/W)
Continuous (T
A
=
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Parameter
Ratings
30
±20
7.5
6.9
49
57
1.6
13
-55 to 150
Units
V
V
A
A
A
mJ
W
mW/
o
C
o
C
25
o
C,
V
GS
= 4.5V, R
θJA
=
50
o
C/W)
Operating and Storage Temperature
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction to Case (Note 2)
Thermal Resistance, Junction to Ambient (Note 2a)
Thermal Resistance, Junction to Ambient (Note 2c)
40
78
135
o
o
C/W
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FDS8978
Device
FDS8978
Package
SO-8
1
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation
FDS8978 Rev. B1