FDS8978 Dual N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
100
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
50
40
I
D
, DRAIN CURRENT (A)
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
I
AS
, AVALANCHE CURRENT (A)
V
DS
= 5V
30
T
J
= 25
o
C
10
STARTING T
J
= 25
o
C
20
10
0
1
STARTING T
J
= 150
o
C
1
0.01
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
T
J
= 150
o
C
T
J
= -55
o
C
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Unclamped Inductive Switching
Capability
50
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
Figure 6. Transfer Characteristics
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 3.5V
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (mW)
40
30
20
10
0
0.0
40
I
D
= 10.2A
30
20
I
D
= 1A
10
V
GS
= 3V
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Saturation Characteristics
Figure 8. Drain to Source On Resistance vs Gate
Voltage and Drain Current
1.2
1.6
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
NORMALIZED GATE
THRESHOLD VOLTAGE
V
GS
= V
DS
, I
D
= 250µA
1.4
1.0
1.2
0.8
1.0
V
GS
= 10V, I
D
= 10.2A
0.8
-80
-40
0
40
80
(
o
C)
120
160
T
J
, JUNCTION TEMPERATURE
0.6
-80
-40
0
40
80
(
o
C)
120
160
T
J
, JUNCTION TEMPERATURE
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
©2011 Fairchild Semiconductor Corporation
FDS8978 Rev. B1
4
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
