FDS8978 Dual N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
1.2
1.0
0.8
0.6
0.4
8
7
I
D
,
DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
6
5
4
3
2
1
0
25
R
θ
JA
= 78 C/W
o
V
GS
= 10V
V
GS
= 4.5V
0.2
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
50
75
100
125
o
150
T
A
,
AMBIENT TEMPERATURE
(
C
)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
2
Figure 2. Maximum Continuous Drain Current vs
Ambient Temperature
1
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JA
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
R
θ
JA
= 135 C/W
o
0.001
-4
10
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
P
(PK)
, PEAK TRANSIENT POWER (W)
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 135 C/W
o
100
T
A
= 25 C
o
10
1
0.5
-4
10
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, PULSE WIDTH (s)
Figure 4. Single Pulse Maximum Power Dissipation
©2011 Fairchild Semiconductor Corporation
FDS8978 Rev. B1
3
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
