FDS8978 Dual N-Channel PowerTrench
®
MOSFET
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250µA, V
GS
= 0V
V
DS
= 24V
V
GS
= 0V
V
GS
= ±20V
T
J
=
150
o
C
30
-
-
-
-
-
-
-
-
1
250
±100
V
µA
nA
On Characteristics
V
GS(TH)
r
DS(on)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250µA
I
D
= 7.5A, V
GS
= 10V
Drain to Source On Resistance
I
D
= 6.9A, V
GS
= 4.5V
I
D
= 7.5A, V
GS
= 10V,
T
J
= 150
o
C
1.2
-
-
-
-
14
17
22
2.5
18
21
29
mΩ
V
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
V
GS
= 0.5V, f = 1MHz
V
GS
= 0V to 10V V = 15V
DD
V
GS
= 0V to 5V I
D
= 7.5A
-
-
-
-
-
-
-
-
-
907
191
112
1.2
17
9
2.3
1.5
3.3
1270
-
-
4.0
26
14
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
nC
Switching Characteristics
(V
GS
= 10V)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V
DD
= 15V, I
D
= 7.5A
V
GS
= 10V, R
GS
= 16Ω
-
-
-
-
-
-
44
7
37
48
24
72
66
10.5
55.5
72
36
108
ns
ns
ns
ns
ns
ns
Drain-Source Diode Characteristics
V
SD
t
rr
Q
RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 7.5A
I
SD
= 2.1A
I
SD
= 7.5A, dI
SD
/dt = 100A/µs
I
SD
= 7.5A, dI
SD
/dt = 100A/µs
-
-
-
-
-
-
19
10
1.25
1.0
25
13
V
V
ns
nC
Notes:
1:
Starting T
J
= 25°C, L = 1mH, I
AS
= 7.5A, V
DD
= 30V, V
GS
= 10V.
2:
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θJC
is guaranteed by design while R
θJA
is determined by the user’s board design.
a) 78°C/W when mounted on a 0.5 in
2
pad of 2 oz copper.
b) 125°C/W when mounted on a 0.02 in
2
pad of 2 oz copper.
c) 135°C/W when mounted on a minimun pad.
©2011 Fairchild Semiconductor Corporation
FDS8978 Rev. B1
2
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
