FDS8958A
Typical Characteristics: Q2 (P-Channel)
10
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -5A
8
-15V
6
V
DS
= -5V
-10V
CAPACITANCE (pF)
800
700
600
500
400
300
200
100
f = 1 MHz
V
GS
= 0 V
C
iss
4
C
oss
C
rss
0
5
10
15
20
25
30
2
0
0
2
4
6
8
10
Q
g
, GATE CHARGE (nC)
0
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 18. Gate Charge Characteristics.
100
100
µ
s
1ms
10ms
100ms
1s
10s
V
GS
= -10V
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25 C
0.01
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
o
Figure 19. Capacitance Characteristics.
10
10
1
1
0.01
0.1
t
AV
, TIME IN AVALANCHE (mS)
Figure 20. Maximum Safe Operating Area.
Figure 21. Unclamped Inductive Switching
Capability Figure
50
SINGLE PULSE
R
θJ
A
= 125°
C/W
T
A
= 25°
C
P(pk), PEAK TRANSIENT POWER (W)
40
30
20
10
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
Figure 22. Single Pulse Maximum Power Dissipation.
FDS8958A Rev F1 (W)
¡
0.1
Tj=125
1
100
¡
DC
I
AS
, AVALANCHE CURRENT (A)
-I
D
, DRAIN CURRENT (A)
R
DS(ON)
LIMIT
Tj=25
10
1000
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
